Influence of thermal treatment in N2 atmosphere on chemical, microstructural and optical properties of indium tin oxide and nitrogen doped indium tin oxide rf-sputtered thin films
Identifieur interne : 000A34 ( Main/Repository ); précédent : 000A33; suivant : 000A35Influence of thermal treatment in N2 atmosphere on chemical, microstructural and optical properties of indium tin oxide and nitrogen doped indium tin oxide rf-sputtered thin films
Auteurs : RBID : Pascal:13-0310109Descripteurs français
- Pascal (Inist)
- Traitement thermique, Microstructure, Propriété optique, Oxyde d'indium, Oxyde d'étain, Addition azote, Addition indium, Addition étain, Dépôt pulvérisation, Couche mince, Recuit thermique rapide, Propriété électrique, Pulvérisation réactive, Dépôt physique phase vapeur, Epaisseur couche, Nanomatériau, Microscopie force atomique, Particule sphérique, Rugosité, Ellipsométrie spectroscopique, Bande interdite photonique, Dispersion, Constante optique, Analyse diffraction RX, Orientation préférentielle, Pulvérisation haute fréquence, Substrat silicium, 6855J, 7866, 8115C, 7350.
English descriptors
- KwdEn :
- Atomic force microscopy, Dispersions, Electrical properties, Heat treatments, Indium additions, Indium oxide, Layer thickness, Microstructure, Nanostructured materials, Nitrogen additions, Optical constants, Optical properties, Photonic band gap, Physical vapor deposition, Preferred orientation, Radiofrequency sputtering, Rapid thermal annealing, Reactive sputtering, Roughness, Spectroscopic ellipsometry, Spherical particle, Sputter deposition, Thin films, Tin additions, Tin oxide, X-ray diffraction analysis.
Abstract
We report the influence of the normal thermal treatment (TT) and of rapid thermal annealing (RTA) on the microstructural, optical and electrical properties of indium tin oxide (ITO) and nitrogen doped indium tin oxide (ITO:N) thin films. The TT was carried out for 1 h at 400 °C and the RTA for 1 min up to 400 °C, both in N2 atmosphere. The ITO and ITO:N films were deposited by reactive sputtering in Argon, and respectively Nitrogen plasma, on Si with (100) and (111) orientation. The present study brings data about the microstructural and optical properties of ITO thin films with thicknesses around 300-400 nm. Atomic Force Microscopy analysis showed the formation of continuous and homogeneous films, fully covered by quasi-spherical shaped particles, with higher roughness values on Si(100) as compared to Si(111). Spectroscopic ellipsometry allowed the determination of film thickness, optical band gap as well as of the dispersion curves of n and k optical constants. X-ray diffraction analysis revealed the presence of diffraction peaks corresponding to the same nominal bulk composition of ITO, but with different intensities and preferential orientation depending on the substrate, atmosphere of deposition and type of thermal treatment.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Influence of thermal treatment in N<sub>2 </sub>atmosphere on chemical, microstructural and optical properties of indium tin oxide and nitrogen doped indium tin oxide rf-sputtered thin films</title><author><name sortKey="Stroescu, H" uniqKey="Stroescu H">H. Stroescu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physical Chemistry "Ilie Murgulescu" of the Romanian Academy, Spl. Independents 202</s1><s2>060021 Bucharest</s2><s3>ROU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Roumanie</country><wicri:noRegion>060021 Bucharest</wicri:noRegion></affiliation></author><author><name sortKey="Anastasescu, M" uniqKey="Anastasescu M">M. Anastasescu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physical Chemistry "Ilie Murgulescu" of the Romanian Academy, Spl. 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Stefan</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>National Institute for Lasers, Plasma and Radiation Physics, Atomistilor 409</s1><s2>77125, Bucharest-Magurele</s2><s3>ROU</s3><sZ>6 aut.</sZ></inist:fA14><country>Roumanie</country><wicri:noRegion>77125, Bucharest-Magurele</wicri:noRegion></affiliation></author><author><name sortKey="Kampylafka, V" uniqKey="Kampylafka V">V. Kampylafka</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>FORTH-IESL</s1><s2>Crete</s2><s3>GRC</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Grèce</country><wicri:noRegion>FORTH-IESL</wicri:noRegion></affiliation></author><author><name sortKey="Aperathitis, E" uniqKey="Aperathitis E">E. Aperathitis</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>FORTH-IESL</s1><s2>Crete</s2><s3>GRC</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Grèce</country><wicri:noRegion>FORTH-IESL</wicri:noRegion></affiliation></author><author><name sortKey="Modreanu, M" uniqKey="Modreanu M">M. Modreanu</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Tyndall National Institute, University College Cork</s1><s2>Cork</s2><s3>IRL</s3><sZ>9 aut.</sZ></inist:fA14><country>Irlande (pays)</country><wicri:noRegion>Cork</wicri:noRegion></affiliation></author><author><name sortKey="Zaharescu, M" uniqKey="Zaharescu M">M. Zaharescu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physical Chemistry "Ilie Murgulescu" of the Romanian Academy, Spl. Independents 202</s1><s2>060021 Bucharest</s2><s3>ROU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Roumanie</country><wicri:noRegion>060021 Bucharest</wicri:noRegion></affiliation></author><author><name sortKey="Gartner, M" uniqKey="Gartner M">M. Gartner</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physical Chemistry "Ilie Murgulescu" of the Romanian Academy, Spl. Independents 202</s1><s2>060021 Bucharest</s2><s3>ROU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Roumanie</country><wicri:noRegion>060021 Bucharest</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0310109</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0310109 INIST</idno><idno type="RBID">Pascal:13-0310109</idno><idno type="wicri:Area/Main/Corpus">000702</idno><idno type="wicri:Area/Main/Repository">000A34</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term><term>Dispersions</term><term>Electrical properties</term><term>Heat treatments</term><term>Indium additions</term><term>Indium oxide</term><term>Layer thickness</term><term>Microstructure</term><term>Nanostructured materials</term><term>Nitrogen additions</term><term>Optical constants</term><term>Optical properties</term><term>Photonic band gap</term><term>Physical vapor deposition</term><term>Preferred orientation</term><term>Radiofrequency sputtering</term><term>Rapid thermal annealing</term><term>Reactive sputtering</term><term>Roughness</term><term>Spectroscopic ellipsometry</term><term>Spherical particle</term><term>Sputter deposition</term><term>Thin films</term><term>Tin additions</term><term>Tin oxide</term><term>X-ray diffraction analysis</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Traitement thermique</term><term>Microstructure</term><term>Propriété optique</term><term>Oxyde d'indium</term><term>Oxyde d'étain</term><term>Addition azote</term><term>Addition indium</term><term>Addition étain</term><term>Dépôt pulvérisation</term><term>Couche mince</term><term>Recuit thermique rapide</term><term>Propriété électrique</term><term>Pulvérisation réactive</term><term>Dépôt physique phase vapeur</term><term>Epaisseur couche</term><term>Nanomatériau</term><term>Microscopie force atomique</term><term>Particule sphérique</term><term>Rugosité</term><term>Ellipsométrie spectroscopique</term><term>Bande interdite photonique</term><term>Dispersion</term><term>Constante optique</term><term>Analyse diffraction RX</term><term>Orientation préférentielle</term><term>Pulvérisation haute fréquence</term><term>Substrat silicium</term><term>6855J</term><term>7866</term><term>8115C</term><term>7350</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report the influence of the normal thermal treatment (TT) and of rapid thermal annealing (RTA) on the microstructural, optical and electrical properties of indium tin oxide (ITO) and nitrogen doped indium tin oxide (ITO:N) thin films. The TT was carried out for 1 h at 400 °C and the RTA for 1 min up to 400 °C, both in N<sub>2</sub> atmosphere. The ITO and ITO:N films were deposited by reactive sputtering in Argon, and respectively Nitrogen plasma, on Si with (100) and (111) orientation. The present study brings data about the microstructural and optical properties of ITO thin films with thicknesses around 300-400 nm. Atomic Force Microscopy analysis showed the formation of continuous and homogeneous films, fully covered by quasi-spherical shaped particles, with higher roughness values on Si(100) as compared to Si(111). Spectroscopic ellipsometry allowed the determination of film thickness, optical band gap as well as of the dispersion curves of n and k optical constants. X-ray diffraction analysis revealed the presence of diffraction peaks corresponding to the same nominal bulk composition of ITO, but with different intensities and preferential orientation depending on the substrate, atmosphere of deposition and type of thermal treatment.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>541</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Influence of thermal treatment in N<sub>2 </sub>atmosphere on chemical, microstructural and optical properties of indium tin oxide and nitrogen doped indium tin oxide rf-sputtered thin films</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices III</s1></fA09><fA11 i1="01" i2="1"><s1>STROESCU (H.)</s1></fA11><fA11 i1="02" i2="1"><s1>ANASTASESCU (M.)</s1></fA11><fA11 i1="03" i2="1"><s1>PREDA (S.)</s1></fA11><fA11 i1="04" i2="1"><s1>NICOLESCU (M.)</s1></fA11><fA11 i1="05" i2="1"><s1>STOICA (M.)</s1></fA11><fA11 i1="06" i2="1"><s1>STEFAN (N.)</s1></fA11><fA11 i1="07" i2="1"><s1>KAMPYLAFKA (V.)</s1></fA11><fA11 i1="08" i2="1"><s1>APERATHITIS (E.)</s1></fA11><fA11 i1="09" i2="1"><s1>MODREANU (M.)</s1></fA11><fA11 i1="10" i2="1"><s1>ZAHARESCU (M.)</s1></fA11><fA11 i1="11" i2="1"><s1>GARTNER (M.)</s1></fA11><fA12 i1="01" i2="1"><s1>FRIED (Miklos)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>MODREANU (Mircea)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>DURAND (Olivier)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>JELLISON (Gerald E.)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>SALVIATI (Giancarlo)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Institute of Physical Chemistry "Ilie Murgulescu" of the Romanian Academy, Spl. Independents 202</s1><s2>060021 Bucharest</s2><s3>ROU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></fA14><fA14 i1="02"><s1>National Institute for Lasers, Plasma and Radiation Physics, Atomistilor 409</s1><s2>77125, Bucharest-Magurele</s2><s3>ROU</s3><sZ>6 aut.</sZ></fA14><fA14 i1="03"><s1>FORTH-IESL</s1><s2>Crete</s2><s3>GRC</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="04"><s1>Tyndall National Institute, University College Cork</s1><s2>Cork</s2><s3>IRL</s3><sZ>9 aut.</sZ></fA14><fA15 i1="01"><s1>Tyndall National Institute, University College Cork</s1><s3>IRL</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>Université Européenne de Bretagne, FOTON-OHM, UMR-CNRS 6082, INSA de Rennes</s1><s3>FRA</s3><sZ>2 aut.</sZ></fA15><fA15 i1="03"><s1>Materials Science and Technology Division, Oak Ridge National Laboratory</s1><s3>USA</s3><sZ>3 aut.</sZ></fA15><fA15 i1="04"><s1>CNR/University of Parma</s1><s3>ITA</s3><sZ>4 aut.</sZ></fA15><fA15 i1="05"><s1>Research Institute for Technical Physics and Materials</s1><s3>HUN</s3><sZ>5 aut.</sZ></fA15><fA20><s1>121-126</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000501925260250</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>28 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0310109</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>We report the influence of the normal thermal treatment (TT) and of rapid thermal annealing (RTA) on the microstructural, optical and electrical properties of indium tin oxide (ITO) and nitrogen doped indium tin oxide (ITO:N) thin films. The TT was carried out for 1 h at 400 °C and the RTA for 1 min up to 400 °C, both in N<sub>2</sub> atmosphere. The ITO and ITO:N films were deposited by reactive sputtering in Argon, and respectively Nitrogen plasma, on Si with (100) and (111) orientation. The present study brings data about the microstructural and optical properties of ITO thin films with thicknesses around 300-400 nm. Atomic Force Microscopy analysis showed the formation of continuous and homogeneous films, fully covered by quasi-spherical shaped particles, with higher roughness values on Si(100) as compared to Si(111). Spectroscopic ellipsometry allowed the determination of film thickness, optical band gap as well as of the dispersion curves of n and k optical constants. X-ray diffraction analysis revealed the presence of diffraction peaks corresponding to the same nominal bulk composition of ITO, but with different intensities and preferential orientation depending on the substrate, atmosphere of deposition and type of thermal treatment.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60H55J</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H66</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A15C</s0></fC02><fC02 i1="04" i2="3"><s0>001B70C50</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Traitement thermique</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Heat treatments</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Microstructure</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Microstructure</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Propriété optique</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Optical properties</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" 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films</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Recuit thermique rapide</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Rapid thermal annealing</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Propriété électrique</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Electrical properties</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Pulvérisation réactive</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Reactive sputtering</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Dépôt physique phase vapeur</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Physical vapor deposition</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Epaisseur couche</s0><s5>29</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Layer thickness</s0><s5>29</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Espesor capa</s0><s5>29</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>30</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>30</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Microscopie force atomique</s0><s5>31</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Atomic force microscopy</s0><s5>31</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Particule sphérique</s0><s5>32</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Spherical particle</s0><s5>32</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Partícula esférica</s0><s5>32</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Rugosité</s0><s5>33</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Roughness</s0><s5>33</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Ellipsométrie spectroscopique</s0><s5>34</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Spectroscopic ellipsometry</s0><s5>34</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Elipsometría espectroscópica</s0><s5>34</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Bande interdite photonique</s0><s5>35</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Photonic band gap</s0><s5>35</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Dispersion</s0><s5>36</s5></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Dispersions</s0><s5>36</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Constante optique</s0><s5>37</s5></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Optical constants</s0><s5>37</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Analyse diffraction RX</s0><s5>38</s5></fC03><fC03 i1="24" i2="3" l="ENG"><s0>X-ray diffraction analysis</s0><s5>38</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>Orientation préférentielle</s0><s5>39</s5></fC03><fC03 i1="25" i2="X" l="ENG"><s0>Preferred orientation</s0><s5>39</s5></fC03><fC03 i1="25" i2="X" l="SPA"><s0>Orientación preferencial</s0><s5>39</s5></fC03><fC03 i1="26" i2="X" l="FRE"><s0>Pulvérisation haute fréquence</s0><s5>40</s5></fC03><fC03 i1="26" i2="X" l="ENG"><s0>Radiofrequency sputtering</s0><s5>40</s5></fC03><fC03 i1="26" i2="X" l="SPA"><s0>Pulverización alta frecuencia</s0><s5>40</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>Substrat silicium</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>6855J</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>7866</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="30" i2="3" l="FRE"><s0>8115C</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="31" i2="3" l="FRE"><s0>7350</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>294</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>"Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices III", E-MRS Spring-Symposium W</s1><s3>Strasbourg FRA</s3><s4>2012-05-14</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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